STB26NM60N N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in D²PAK package
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STB26NM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB26NM60N |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB26NM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STB26NM60N :DS6239: N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP and TO-247 packages |
5 |
1137KB |
