STB30N65M5 N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET D²PAK
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency
技术特性
- Worldwide best RDS(on)*area
- Higher VDSSrating
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
- High dv/dt capability
应用领域
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内部原理图
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STB30N65M5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB30N65M5 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB30N65M5 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB30N65M5 :DS6070: N-channel 650 V, 0.125 Ω, 22 A, MDmesh™ V Power MOSFET D²PAK, TO-220FP, I²PAK, TO-220, TO-247 |
3 |
1277KB |
MARKETING BROCHURES
CONFERENCE PAPERS
