STB36NM60N N-channel 600 V, 0.092 Ohm, 29 A MDmesh(TM) II Power MOSFET in D²PAK
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary transistor combines a new vertical structure with the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
|
内部原理图
 |
STB36NM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB36NM60N |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB36NM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STB36NM60N :DS6433: N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in DPAK package |
3 |
946KB |
