STD2HNK60Z-1 N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in IPAK package
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications
技术特性
- Gate charge minimized
- 100% avalanche tested
- Extremely high dv/dt capability
- ESD improved capability
- New high voltage benchmark
应用领域
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内部原理图
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STD2HNK60Z-1 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD2HNK60Z-1 |
Active |
|
1000 |
IPAK |
Tube |
|
STD2HNK60Z-1 |
DATASHEET
| 描述 |
版本 |
大小 |
| STD2HNK60Z-1 :DS3646: N-channel 600 V, 4.4 Ω, 2 A Zener-protected SuperMESH™ Power MOSFET in TO-92-TO-220FP-DPAK-IPAK packages |
5 |
885KB |
