STD65N3LLH5 N-channel 30 V, 0.0061 Ohm, 65 A, DPAK STripFET(TM) V Power MOSFET
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit.
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
应用领域
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内部原理图
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STD65N3LLH5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD65N3LLH5 |
Evaluation |
|
1000 |
DPAK |
Tape And Reel |
|
STD65N3LLH5 |
| STD65N3LLH5T4 |
Evaluation |
|
1000 |
DPAK |
Tape And Reel |
|
STD65N3LLH5T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STD65N3LLH5 :DS6764: N-channel 30 V, 0.0061 Ω, 65 A, DPAK, IPAK STripFET™ V Power MOSFET |
1 |
792KB |
