STD7ANM60N N-channel 600 V, 5 A, 0.84 Ohm typ., MDmesh(TM) II Power MOSFET in DPAK package
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
- Switching applications
- Automotive
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内部原理图
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STD7ANM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD7ANM60N |
Preview |
|
1000 |
DPAK |
Tape And Reel |
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STD7ANM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STD7ANM60N :DS9116: N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh™ II Power MOSFET in D²PAK and DPAK packages |
1 |
1008KB |
