STD7NM80-1 N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in IPAK package
MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STD7NM80-1 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD7NM80-1 |
Active |
|
1000 |
IPAK |
Tube |
|
STD7NM80-1 |
DATASHEET
| 描述 |
版本 |
大小 |
| STD7NM80-1 :DS4854: N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET |
3 |
970KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
