STD845DN40 Transistors, Power Bipolar, High Voltage
The device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in dual-island DIP-8 package with separated terminals to provide a high degree of assembly flexibility
技术特性
- Low VCE(sat)
- Simplified circuit design
- Reduced component count
- Fast switching speed
应用领域
- Compact fluorescent lamp (CFL) 220 V mains
- Electronic ballast for fluorescent lighting
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内部原理图
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STD845DN40 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD845DN40 |
Active |
|
1000 |
DIP-8 |
Tube |
|
STD845DN40 |
DATASHEET
| 描述 |
版本 |
大小 |
| STD845DN40 :DS6746: Dual NPN high voltage transistors in a single package |
3 |
130KB |
