STD9NM50N N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in DPAK
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market
技术特性
- 100% avalanche tested
- Low input capacitances and gate charge
- Low gate input resistance
应用领域
- Switching application
- Automotive
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内部原理图
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STD9NM50N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD9NM50N |
Active |
|
1000 |
DPAK |
Tape And Reel |
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STD9NM50N |
DATASHEET
| 描述 |
版本 |
大小 |
| STD9NM50N :DS8666: N-channel 500 V, 0.73 Ω, 5 A MDmesh™II Power MOSFET in DPAK |
1 |
964KB |
