STF18NM80 N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-220FP package
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STF18NM80 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STF18NM80 |
Active |
|
1000 |
TO-220FP |
Tube |
|
STF18NM80 |
DATASHEET
| 描述 |
版本 |
大小 |
| STF18NM80 :DS6113: N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages |
5 |
1049KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
