STFI10NK60Z N-channel 600 V, 0.65 Ohm, 10 A, Zener-protected SuperMESH(TM) Power MOSFET in I²PAKFP package
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications
技术特性
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
应用领域
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内部原理图
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STFI10NK60Z 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STFI10NK60Z |
Active |
|
1000 |
I²PAKFP |
Tube |
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STFI10NK60Z |
DATASHEET
| 描述 |
版本 |
大小 |
| STFI10NK60Z :DS7280: N-channel 600 V, 0.65 Ω, 10 A, Zener-protected SuperMESH™ Power MOSFET in I²PAKFP package |
3 |
525KB |
