STFI26NM60N N-channel 600 V, 0.135 Ohm, 20 A, MDmesh(TM) II Power MOSFET in I²PAKFP package
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters
技术特性
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STFI26NM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STFI26NM60N |
Active |
|
1000 |
I²PAKFP |
Tube |
|
STFI26NM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STFI26NM60N :DS8755: N-channel 600 V, 0.135 Ω, 20 A MDmesh™ II Power MOSFET in I²PAKFP package |
2 |
674KB |
