STGB10NB40LZ 10 A - 410 V internally clamped IGBT
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection
技术特性
- POLYSILICON GATE VOLTAGE DRIVEN
- LOW THRESHOLD VOLTAGE
- LOW ON-VOLTAGE DROP
- LOW GATE CHARGE
- HIGH CURRENT CAPABILITY
- HIGH VOLTAGE CLAMPING FEATURE
应用领域
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管脚定义图
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STGB10NB40LZ 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGB10NB40LZT4 |
Active |
0.968 |
1000 |
D²PAK |
Tape And Reel |
|
STGB10NB40LZT4 |
| STGB10NB40LZ |
Active |
0.928 |
1000 |
D²PAK |
Tube |
|
STGB10NB40LZ |
DATASHEET
| 描述 |
版本 |
大小 |
| STGB10NB40LZ :N-channel clamped 20A - D²PAK internally clamped PowerMESH™ IGBT |
3 |
486KB |
