STGD18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system
技术特性
- AEC Q101 compliant
- 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
应用领域
- Pencil coil electronic ignition driver
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管脚定义图
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STGD18N40LZ 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGD18N40LZT4 |
Active |
0.726 |
1000 |
DPAK |
Tape And Reel |
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STGD18N40LZT4 |
| STGD18N40LZ-1 |
Active |
0.726 |
1000 |
IPAK |
Tube |
|
STGD18N40LZ-1 |
DATASHEET
| 描述 |
版本 |
大小 |
| STGD18N40LZ :DS5664: EAS 180 mJ - 390 V - internally clamped IGBT |
5 |
888KB |
