STGW35HF60WDI 35 A, 600 V ultrafast IGBT with low drop diode
This ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz).
技术特性
- Improved Eoffat elevated temperature
- Low CRES / CIESratio (no cross-conduction susceptibility)
- Low VF soft recovery antiparallel diode
应用领域
- Welding
- Induction heating
- Resonant converters
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内部原理图
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STGW35HF60WDI 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGWA35HF60WDI |
Active |
|
1000 |
TO-247 long leads |
Tube |
|
STGWA35HF60WDI |
| STGW35HF60WDI |
Active |
|
1000 |
TO-247 |
Tube |
|
STGW35HF60WDI |
DATASHEET
| 描述 |
版本 |
大小 |
| STGW35HF60WDI :DS6424: 35 A, 600 V ultrafast IGBT with low drop diode |
3 |
1050KB |
FLYERS
| 描述 |
版本 |
大小 |
| FLHFWIGBTS0710 : Ultra-fast (W series) HF - IGBTS |
1.0.0 |
255KB |
CONFERENCE PAPERS
