STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation
技术特性
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 μs short-circuit withstand time
- Very fast soft recovery antiparallel diode
- Lead free package
应用领域
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- High switching frequency converters
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内部原理图
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STGW60H65DF 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGW60H65DF |
Active |
|
1000 |
TO-247 |
Tube |
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STGW60H65DF |
DATASHEET
| 描述 |
版本 |
大小 |
| STGW60H65DF :DS8980: 60 A, 650 V field stop trench gate IGBT with very fast diode |
3 |
1920KB |
