This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This device is well-suited for resonant or soft-switching applications.
Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation
订购型号 | 产品状态 | 美金价格 | 数量 | 封装 | 包装形式 | 温度范围 | 材料声明 |
STGWT28IH120DF | Evaluation | 1000 | TO-3P | Tube | STGWT28IH120DF |
描述 | 版本 | 大小 |
STGWT28IH120DF :DS9193: 25 A, 1200 V, trench gate field stop IGBT | 1 | 268KB |