STH180N10F3-6 N-channel 100 V, 3.9 mOhm, 180 A, H2PAK-6 STripFET(TM) III Power MOSFET
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance
技术特性
- Ultra low on-resistance
- 100% avalanche tested
应用领域
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内部原理图
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STH180N10F3-6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STH180N10F3-6 |
Active |
|
1000 |
H2PAK-6 |
Tape And Reel |
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STH180N10F3-6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STH180N10F3-6 :DS8703: N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-6 STripFET™III Power MOSFET |
2 |
924KB |
