STH360N4F6-2 N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
技术特性
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
应用领域
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内部原理图
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STH360N4F6-2 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STH360N4F6-2 |
Preview |
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1000 |
H2PAK-2 |
Tape And Reel |
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STH360N4F6-2 |
DATASHEET
| 描述 |
版本 |
大小 |
| STH360N4F6-2 :DS9157: N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package |
1 |
354KB |
