STI14NM50N N-channel 500 V, 0.28 Ohm, 12 A MDmesh(TM) II Power MOSFET in I²PAK package
These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STI14NM50N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STI14NM50N |
Active |
|
1000 |
I²PAK |
Tube |
|
STI14NM50N |
DATASHEET
| 描述 |
版本 |
大小 |
| STI14NM50N :DS6618: N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages |
5 |
1252KB |
