STL100N10F7 N-channel 100 V, 0.0062 Ohm typ., 19 A, STripFET(TM) VII DeepGATE Power MOSFET in a PowerFLAT(TM) 5x6 package
This device is an N-channel Power MOSFET developed using the 7thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages
技术特性
- Ultra low on-resistance
- 100% avalanche tested
应用领域
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内部原理图
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STL100N10F7 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL100N10F7 |
Preview |
|
1000 |
PowerFLAT 5x6 |
Tape And Reel |
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STL100N10F7 |
DATASHEET
| 描述 |
版本 |
大小 |
| STL100N10F7 :DS9250: N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package |
1 |
471KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
