STL128DN High voltage fast-switching NPN power transistor
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies
技术特性
- High voltage capability
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
- Large RBSOA
- Integrated antiparallel collector-emitter diode
应用领域
- Electronic ballast for fluorescent lighting
- Flyback and forward single transistor low
power converters
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内部原理图
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STL128DN 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STLD128DNT4 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
STLD128DNT4 |
| STL128DN |
Active |
|
1000 |
TO-220AB |
Tube |
|
STL128DN |
| STL128DNFP |
NRND |
|
1000 |
TO-220FP |
Tube |
|
STL128DNFP |
DATASHEET
| 描述 |
版本 |
大小 |
| STL128DN :DS5518: High voltage fast-switching NPN power transistor |
3 |
418KB |
