STL13NM60N N-channel 600 V, 0.320 Ohm typ., 10 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package
This device is a N-channel Power MOSFETs made using the second generation of MDmesh™ technology. This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STL13NM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL13NM60N |
Active |
|
1000 |
PowerFLAT 8x8 HV |
Tape And Reel |
|
STL13NM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STL13NM60N :DS7240: N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV MDmesh™ II Power MOSFET |
1 |
831KB |
