STL160N3LLH6 N-channel 30 V, 0.0011 Ohm typ., 35 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in PowerFLAT(TM) 5x6 package
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
应用领域
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测试电路图
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STL160N3LLH6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL160N3LLH6 |
Active |
|
1000 |
PowerFLAT 5x6 |
Tape And Reel |
|
STL160N3LLH6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STL160N3LLH6 :DS7030: N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET |
2 |
776KB |
CONFERENCE PAPERS
