STL18N55M5 N-channel 550 V, 0.205 Ohm typ., 13 A MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

技术特性

100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance

应用领域

Switching applications

内部原理图

STL18N55M5 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
STL18N55M5	Active		1000	PowerFLAT 8x8 HV	Tape And Reel		STL18N55M5

DATASHEET

描述	版本	大小
STL18N55M5 :DS6825: N-channel 550 V, 0.205 Ω, 13 A PowerFLAT™ 8x8 HV MDmesh™ V Power MOSFET	2	859KB

MARKETING BROCHURES

描述	版本	大小
MDmesh V power MOSFETs	1.0	1242KB

CONFERENCE PAPERS

描述	版本	大小
Latest ST MOSFET and IGBT technologies for the best efficiency in solar inverters	2.1	460KB