STL26NM60N N-channel 600 V, 0.160 Ohm typ., 19 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STL26NM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL26NM60N |
Active |
|
1000 |
PowerFLAT 8x8 HV |
Tape And Reel |
|
STL26NM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STL26NM60N :DS7105: N-channel 600 V, 0.160 Ω, 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET |
2 |
693KB |
