STL50N25N3LLH5 Dual N-channel 30 V, 6 mOhm typ., 14.6 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 asymmetrical double island package

This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class

技术特性

RDS(on)* Qgindustry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses

应用领域

Switching applications

内部原理图

STL50N25N3LLH5 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
STL50N25N3LLH5	Preview		1000	PowerFLAT 5x6 D.I.	Tape And Reel		STL50N25N3LLH5

DATASHEET

描述	版本	大小
STL50N25N3LLH5 :DS9180: Dual N-channel 30 V, 0.006 Ω typ., 14.6 A PowerFLAT™ STripFET™ V Power MOSFET in 5x6 asymmetrical double island package	1	1150KB

APPLICATION NOTES

描述	版本	大小
AN1703: Guidelines for using ST's MOSFET smd Packages	1	760KB