STL65DN3LLH5 Dual N-channel 30 V, 0.0059 Ohm, 19 A, PowerFLAT(TM)(5x6) double island, STripFET (TM) V Power MOSFET
This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
应用领域
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测试电路图
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STL65DN3LLH5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL65DN3LLH5 |
Active |
|
1000 |
PowerFLAT 5x6 D.I. |
Tape And Reel |
|
STL65DN3LLH5 |
DATASHEET
| 描述 |
版本 |
大小 |
| STL65DN3LLH5 :Dual N-channel 30 V, 0.0059 Ω, 19 A PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET |
1 |
503KB |
