STL80N3LLH6 N-channel 30 V, 0.0046 Ohm, 21 A PowerFLAT(TM) 5x6 STripFET(TM) VI DeepGATE(TM) Power MOSFET
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
- Very low switching gate charge
应用领域
|
测试电路图
 |
STL80N3LLH6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL80N3LLH6 |
Active |
|
1000 |
PowerFLAT 5x6 |
Tape And Reel |
|
STL80N3LLH6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STL80N3LLH6 :DS6596: N-channel 30 V, 0.0046 Ω, 21 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET |
4 |
870KB |
CONFERENCE PAPERS
