STL8DN10LF3 Dual N-channel 100 V, 25 mOhm typ., 7.8 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 double island package
This device is a dual N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance
技术特性
- Logic level VGS(th)
- 175 °C junction temperature
- 100% avalanche rated
应用领域
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内部原理图
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STL8DN10LF3 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL8DN10LF3 |
Active |
|
1000 |
PowerFLAT 5x6 D.I |
Tape And Reel |
|
STL8DN10LF3 |
DATASHEET
| 描述 |
版本 |
大小 |
| STL8DN10LF3 :DS8978: Dual N-channel 100 V, 25 mΩ, 7.8 A STripFET™ III Power MOSFET in PowerFLAT™ 5x6 double island package |
3 |
758KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
