STP100N10F7 N-channel 100 V, 0.0068 Ohm typ., 80 A, STripFET(TM) VII DeepGATE Power MOSFET in DPAK package
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages
技术特性
- Ultra low on-resistance
- 100% avalanche tested
应用领域
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内部原理图
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STP100N10F7 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP100N10F7 |
Preview |
|
1000 |
TO-220AB |
Tube |
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STP100N10F7 |
DATASHEET
| 描述 |
版本 |
大小 |
| STP100N10F7 :DS9291: N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK and TO-220 packages |
1 |
491KB |
