STP10N65K3 N-channel 650 V, 0.9 Ohm, 10 A SuperMESH3(TM) Power MOSFET in TO-220AB package
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications
技术特性
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitances
- Improved diode reverse recovery characteristics
- Zener-protected
应用领域
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内部原理图
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STP10N65K3 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP10N65K3 |
Active |
|
1000 |
TO-220AB |
Tube |
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STP10N65K3 |
DATASHEET
| 描述 |
版本 |
大小 |
| STP10N65K3 :DS6285: N-channel 650 V, 0.9 Ω, 10 A, TO-220AB SuperMESH3™ Power MOSFET |
2 |
799KB |
