STP10NM60N N-channel 600 V, 0.53 Ohm, 10 A, TO-220 MDmesh(TM) II Power MOSFET
These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STP10NM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP10NM60N |
Active |
|
1000 |
TO-220AB |
Tube |
|
STP10NM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STP10NM60N :N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET |
5 |
902KB |
