STP19NM50N N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220
This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics
技术特性
- 100% avalanche tested
- Low input capacitances and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STP19NM50N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP19NM50N |
Active |
|
1000 |
TO-220AB |
Tube |
|
STP19NM50N |
DATASHEET
| 描述 |
版本 |
大小 |
| STP19NM50N :N-channel 500 V, 0.2 Ω, 14 A MDmesh™ II Power MOSFET in TO-220FP, TO-220 and TO-247 |
1 |
710KB |
