STP210N75F6 N-channel 75 V, 3 mOhm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
This product is a 75 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
技术特性
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
应用领域
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内部原理图
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STP210N75F6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP210N75F6 |
Active |
|
1000 |
TO-220AB |
Tube |
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STP210N75F6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STP210N75F6 :DS7122: N-channel 75 V, 3 mΩ, 120 A TO-220 STripFET™ VI DeepGATE™ Power MOSFET |
1 |
688KB |
