STP400N4F6 N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages.
技术特性
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
应用领域
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内部原理图
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STP400N4F6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP400N4F6 |
Preview |
|
1000 |
TO-220AB |
Tube |
|
STP400N4F6 |
| STP400N4F6T4 |
Preview |
|
1000 |
TO-220AB |
Tape And Reel |
|
STP400N4F6T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STP400N4F6 :DS9165: N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages |
1 |
176KB |
