STP4N150 N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-220
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics
技术特性
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic packages
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
应用领域
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内部原理图
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STP4N150 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP4N150 |
Active |
|
1000 |
TO-220AB |
Tube |
|
STP4N150 |
DATASHEET
| 描述 |
版本 |
大小 |
| STP4N150 :DS4257: N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF |
9 |
754KB |
