STP60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™2; V Power MOSFET
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
应用领域
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内部原理图
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STP60N3LH5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP60N3LH5 |
Active |
|
1000 |
TO-220AB |
Tape And Reel |
|
STP60N3LH5 |
| STP60N3LH5T4 |
Active |
|
1000 |
TO-220AB |
Tape And Reel |
|
STP60N3LH5T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STP60N3LH5 :DS5560: N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET™ V Power MOSFET |
4 |
748KB |
CONFERENCE PAPERS
