STP8NM50N N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in TO-220
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
技术特性
- Worldwide best RDS(on) * area
- Higher VDSSrating
- High dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
应用领域
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内部原理图
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STP8NM50N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP8NM50N |
Active |
|
1000 |
TO-220AB |
Tube |
|
STP8NM50N |
DATASHEET
| 描述 |
版本 |
大小 |
| STP8NM50N :DS6808: N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packages |
6 |
1160KB |
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