STPSC1006 600 V power Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
技术特性
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Particularly suitable in PFC boost diode function
STPSC1006 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STPSC1006G-TR |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STPSC1006G-TR |
| STPSC1006D |
Active |
|
1000 |
DO 220 |
Tube |
|
STPSC1006D |
DATASHEET
| 描述 |
版本 |
大小 |
| STPSC1006: 600 V power Schottky silicon carbide diode |
10 |
133KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN3152: The right technology for solar converters |
1 |
419KB |
| AN3203: EVL250W-ATX80PL: 250W ATX SMPS demonstration board |
2 |
2723KB |
PRODUCT PRESENTATIONS
| 描述 |
版本 |
大小 |
| STPSC1006 : ST products and solutions for solar energy |
1.0.0 |
2136KB |
| STPSC1006 : Energy-efficient solutions for offline LED lighting and general illumination |
2.0.0 |
2646KB |
FLYERS
