STPSC20H065C 650 V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases

技术特性

No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability

管脚定义图

STPSC20H065C 功能框图

STPSC20H065C 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
STPSC20H065CT	Active		1000	TO-220AB	Tube		STPSC20H065CT
STPSC20H065CW	Active		1000	TO-247	Tube		STPSC20H065CW

DATASHEET

描述	版本	大小
STPSC20H065C :DS9227: 650 V power Schottky silicon carbide diode	2	107KB