STS10DN3LH5 Dual N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET (TM); V Power MOSFET
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM
技术特性
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
应用领域
|
内部原理图
 |
STS10DN3LH5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STS10DN3LH5 |
Active |
|
1000 |
SO-8 |
Tube |
|
STS10DN3LH5 |
DATASHEET
| 描述 |
版本 |
大小 |
| STS10DN3LH5 :DS6232: Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power MOSFET |
1 |
768KB |
CONFERENCE PAPERS
