STS12N3LLH5 N-channel 30 V, 0.0063 Ohm, 12 A, SO-8, STripFET(TM) Power MOSFET
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
应用领域
|
内部原理图
 |
STS12N3LLH5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STS12N3LLH5 |
Active |
|
1000 |
SO-8 |
Tube |
|
STS12N3LLH5 |
DATASHEET
| 描述 |
版本 |
大小 |
| STS12N3LLH5 :DS6723: N-channel 30 V, 0.0068 Ω, 12 A, SO-8 STripFET™ V Power MOSFET |
3 |
527KB |
CONFERENCE PAPERS
