The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies
技术特性
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订购型号 | 产品状态 | 美金价格 | 数量 | 封装 | 包装形式 | 温度范围 | 材料声明 |
STT13005-K | Active | 1000 | SOT-32 | Poly Bag | STT13005-K |
描述 | 版本 | 大小 |
STT13005 :DS5333: High voltage fast-switching NPN power transistor | 3 | 262KB |