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STT13005D High voltage fast-switching NPN power transistor

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies

技术特性 Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 应用领域 Electronic ballast for fluorescent lighting Flyback and forward single transistor low power converters

内部原理图

STT13005D 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
STT13005D-K	Active		1000	SOT-32	Poly Bag		STT13005D-K

DATASHEET

描述	版本	大小
STT13005D :DS5890: High voltage fast-switching NPN power transistor	2	261KB