STT6N3LLH6 N-channel 30 V, 0.025 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages

技术特性

RDS(on)* Qgindustry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses

应用领域

Switching applications

内部原理图

STT6N3LLH6 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
STT6N3LLH6	Preview		1000	SOT23-6L	Tape And Reel		STT6N3LLH6

DATASHEET

描述	版本	大小
STT6N3LLH6 :DS8981: N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package	1	965KB

APPLICATION NOTES

描述	版本	大小
AN1703: Guidelines for using ST's MOSFET smd Packages	1	760KB