STT818B HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR
The device is manufactured in low voltage PNP Planar Technology with "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage
技术特性
- Very low collector to emitter saturation voltage
- DC current gain > 100 (hFE)
- 3 A continuous collector current (IC)
应用领域
- Power management in portable equipments
- Switching regulator in battery charger
applications
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内部原理图
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STT818B 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STT818B |
Active |
|
1000 |
SOT23-6L |
Tape And Reel |
|
STT818B |
DATASHEET
| 描述 |
版本 |
大小 |
| STT818B :High gain low voltage PNP power transistor |
5 |
149KB |
