STU4N52K3 N-channel 525 V, 2.5 A, 2.1 Ohm, IPAK, SuperMESH3(TM) Power MOSFET
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications
技术特性
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
应用领域
|
内部原理图
 |
STU4N52K3 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STU4N52K3 |
Active |
|
1000 |
IPAK |
Tube |
|
STU4N52K3 |
DATASHEET
| 描述 |
版本 |
大小 |
| STU4N52K3 :N-channel 525 V, 2.5 A, 2.1 Ω, IPAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET |
1 |
933KB |
