STU6N65K3 N-channel 650 V, 1.1 Ohm, 5.4 A SuperMESH3(TM) Power MOSFET in IPAK package
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications
技术特性
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
应用领域
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内部原理图
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STU6N65K3 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STU6N65K3 |
Active |
|
1000 |
IPAK |
Tube |
|
STU6N65K3 |
DATASHEET
| 描述 |
版本 |
大小 |
| STU6N65K3 :DS7091: N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK |
2 |
902KB |
