STW12NK90Z N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products
技术特性
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Very good manufacturing repeatability
应用领域
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内部原理图
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STW12NK90Z 订购信息
订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
STW12NK90Z |
Active |
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1000 |
TO-247 |
Tube |
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STW12NK90Z |
DATASHEET
描述 |
版本 |
大小 |
STW12NK90Z :DS3364: N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH™ Power MOSFET |
6 |
480KB |